Negative voltage modulated multi-level resistive switching by using a Cr/BaTiO_x/TiN structure and quantum conductance through evidence of H₂O₂ sensing mechanism.

ABSTRACT: Negative voltage modulated multi-level resistive switching with quantum conductance during staircase-type RESET and its transport characteristics in Cr/BaTiO_x/TiN structure have been investigated for the first time. The as-deposited amorphous BaTiO_x film has been confirmed by high-resolution transmission electron microscopy. X-ray photo-electron spectroscopy shows different oxidation states of Ba in the switching material, which is responsible for tunable more than 10 resistance states by varying negative stop voltage owing to slow decay value of RESET slope (217.39 mV/decade). Quantum conductance phenomenon has been observed in staircase RESET cycle of the memory devices. By inspecting the oxidation states of Ba⁺ and Ba²⁺ through measuring H

SUBMITTER: Chakrabarti S 

PROVIDER: S-EPMC5498493 | biostudies-literature | 2017 Jul

REPOSITORIES: biostudies-literature