Topological delocalization and tuning of surface channel separation in Bi₂Se₂Te Topological Insulator Thin films.

ABSTRACT: The surface states of a 3D topological insulator (TI) exhibit topological protection against backscattering. However, the contribution of bulk electrons to the transport data is an impediment to the topological protection of surface states. We report the tuning of the chemical potential in the bulk in Bi₂Se₂Te TI thin films, pinning it near the center of the bulk band gap, thereby suppressing the bulk carriers. The temperature dependent resistance of these films show activated behavior down to 50 K, followed by a metallic transition at lower temperatures, a hallmark of robustness of TI surface states. Manifestation of topological protection and surface dominated transport is explained by 2D weak antilocalization phenomenon. We further explore the effect of surface to

SUBMITTER: Gopal RK 

PROVIDER: S-EPMC5501793 | biostudies-literature | 2017 Jul

REPOSITORIES: biostudies-literature