Enhanced electron dephasing in three-dimensional topological insulators.

ABSTRACT: Study of the dephasing in electronic systems is not only important for probing the nature of their ground states, but also crucial to harnessing the quantum coherence for information processing. In contrast to well-studied conventional metals and semiconductors, it remains unclear which mechanism is mainly responsible for electron dephasing in three-dimensional topological insulators (TIs). Here, we report on using weak antilocalization effect to measure the dephasing rates in highly tunable (Bi,Sb)₂Te₃ thin films. As the transport is varied from a bulk-conducting regime to surface-dominant transport, the dephasing rate is observed to evolve from a linear temperature dependence to a sublinear power-law dependence. Although the former is consistent with the Nyquist ele

SUBMITTER: Liao J 

PROVIDER: S-EPMC5508222 | biostudies-literature | 2017 Jul

REPOSITORIES: biostudies-literature