Phenomenological Model for Defect Interactions in Irradiated Functional Materials.

ABSTRACT: The ability to tailor the performance of functional materials, such as semiconductors, via careful manipulation of defects has led to extraordinary advances in microelectronics. Functional metal oxides are no exception - protonic-defect-conducting oxides find use in solid oxide fuel cells (SOFCs) and oxygen-deficient high-temperature superconductors are poised for power transmission and magnetic imaging applications. Similarly, the advantageous functional responses in ferroelectric materials that make them attractive for use in microelectromechanical systems (MEMS), logic elements, and environmental energy harvesting, are derived from interactions of defects with other defects (such as domain walls) and with the lattice. Chemical doping has traditionally been employed to study the effects

SUBMITTER: Brewer SJ 

PROVIDER: S-EPMC5509665 | biostudies-literature | 2017 Jul

REPOSITORIES: biostudies-literature