Surface Energy Driven Cubic-to-Hexagonal Grain Growth of Ge₂Sb₂Te₅ Thin Film.

ABSTRACT: Phase change memory (PCM) is a promising nonvolatile memory to reform current commercial computing system. Inhibiting face-centered cubic (f-) to hexagonal (h-) phase transition of Ge₂Sb₂Te₅ (GST) thin film is essential for realizing high-density, high-speed, and low-power PCM. Although the atomic configurations of f- and h-lattices of GST alloy and the transition mechanisms have been extensively studied, the real transition process should be more complex than previous explanations, e.g. vacancy-ordering model for f-to-h transition. In this study, dynamic crystallization procedure of GST thin film was directly characterized by in situ heating transmission electron microscopy. We reveal that the equilibrium to h-phase is more like an abnormal grain growth pr

SUBMITTER: Zheng Y 

PROVIDER: S-EPMC5517630 | biostudies-literature | 2017 Jul

REPOSITORIES: biostudies-literature