Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs.

ABSTRACT: Single crystal semiconductor nanomembranes (NM) are important in various applications such as heterogeneous integration and flexible devices. This paper reports the fabrication of AlGaN/GaN NMs and NM high electron mobility transistors (HEMT). Electrochemical etching is used to slice off single-crystalline AlGaN/GaN layers while preserving their microstructural quality. A double heterostructure design with a symmetric strain profile is employed to ensure minimal residual strain in freestanding NMs after release. The mobility of the two-dimensional electron gas (2DEG), formed by the AlGaN/GaN heterostructure, is noticeably superior to previously reported values of many other NMs. AlGaN/GaN nanomembrane HEMTs are fabricated on SiO₂ and flexible polymeric substrates. Excellent elec

SUBMITTER: Chang TH 

PROVIDER: S-EPMC5527108 | biostudies-literature | 2017 Jul

REPOSITORIES: biostudies-literature