Fabrication of Epitaxial Fe₃O₄ Film on a Si(111) Substrate.

ABSTRACT: The application of magnetic oxides in spintronics has recently attracted much attention. The epitaxial growth of magnetic oxide on Si could be the first step of new functional spintronics devices with semiconductors. However, epitaxial spinel ferrite films are generally grown on oxide substrates, not on semiconductors. To combine oxide spintronics and semiconductor technology, we fabricated Fe₃O₄ films through epitaxial growth on a Si(111) substrate by inserting a γ-Al₂O₃ buffer layer. Both of γ-Al₂O₃ and Fe₃O₄ layer grew epitaxially on Si and the films exhibited the magnetic and electronic properties as same as bulk. Furthermore, we also found the buffer layer dependence of crystal structure of Fe

SUBMITTER: Takahashi N 

PROVIDER: S-EPMC5539154 | biostudies-literature | 2017 Aug

REPOSITORIES: biostudies-literature