Graphene/h-BN Heterostructures for Vertical Architecture of RRAM Design.

ABSTRACT: The development of RRAM is one of the mainstreams for next generation non-volatile memories to replace the conventional charge-based flash memory. More importantly, the simpler structure of RRAM makes it feasible to be integrated into a passive crossbar array for high-density memory applications. By stacking up the crossbar arrays, the ultra-high density of 3D horizontal RRAM (3D-HRAM) can be realized. However, 3D-HRAM requires critical lithography and other process for every stacked layer, and this fabrication cost overhead increases linearly with the number of stacks. Here, it is demonstrated that the 2D material-based vertical RRAM structure composed of graphene plane electrode/multilayer h-BN insulating dielectric stacked layers, AlO_x/TiO_x resistive switching laye

SUBMITTER: Huang YJ 

PROVIDER: S-EPMC5575158 | biostudies-literature | 2017 Aug

REPOSITORIES: biostudies-literature