Graphene Klein tunnel transistors for high speed analog RF applications.

ABSTRACT: We propose Graphene Klein tunnel transistors (GKTFET) as a way to enforce current saturation while maintaining large mobility for high speed radio frequency (RF) applications. The GKTFET consists of a sequence of angled graphene p-n junctions (GPNJs). Klein tunneling creates a collimation of electrons across each GPNJ, so that the lack of substantial overlap between transmission lobes across successive junctions creates a gate-tunable transport gap without significantly compromising the on-current. Electron scattering at the device edge tends to bleed parasitic states into the gap, but the resulting pseudogap is still sufficient to create a saturated output (I _D -V _D ) characteristic and a high output resistance. The modulated density of states generates a higher tran

SUBMITTER: Tan Y 

PROVIDER: S-EPMC5575307 | biostudies-literature | 2017 Aug

REPOSITORIES: biostudies-literature