A Two-Step Growth Pathway for High Sb Incorporation in GaAsSb Nanowires in the Telecommunication Wavelength Range.

ABSTRACT: Self-catalyzed growth of axial GaAs_1-xSb_x nanowire (NW) arrays with bandgap tuning corresponding to the telecommunication wavelength of 1.3 µm poses a challenge, as the growth mechanism for axial configuration is primarily thermodynamically driven by the vapor-liquid-solid growth process. A systematic study carried out on the effects of group V/III beam equivalent (BEP) ratios and substrate temperature (T_sub) on the chemical composition in NWs and NW density revealed the efficacy of a two-step growth temperature sequence (initiating the growth at relatively higher T_sub = 620 °C and then continuing the growth at lower T_sub) as a promising approach for obtaining high-density NWs at higher Sb compositions. The dependence of the Sb composi

SUBMITTER: Ahmad E 

PROVIDER: S-EPMC5579295 | biostudies-literature | 2017 Aug

REPOSITORIES: biostudies-literature