Negative Differential Conductance & Hot-Carrier Avalanching in Monolayer WS2 FETs.

ABSTRACT: The high field phenomena of inter-valley transfer and avalanching breakdown have long been exploited in devices based on conventional semiconductors. In this Article, we demonstrate the manifestation of these effects in atomically-thin WS₂ field-effect transistors. The negative differential conductance exhibits all of the features familiar from discussions of this phenomenon in bulk semiconductors, including hysteresis in the transistor characteristics and increased noise that is indicative of travelling high-field domains. It is also found to be sensitive to thermal annealing, a result that we attribute to the influence of strain on the energy separation of the different valleys involved in hot-electron transfer. This idea is supported by the results of ensemble Monte Carlo sim

SUBMITTER: He G 

PROVIDER: S-EPMC5595880 | biostudies-literature | 2017 Sep

REPOSITORIES: biostudies-literature