Electrical properties and thermal stability in stack structure of HfO₂/Al₂O₃/InSb by atomic layer deposition.

ABSTRACT: Changes in the electrical properties and thermal stability of HfO₂ grown on Al₂O₃-passivated InSb by atomic layer deposition (ALD) were investigated. The deposited HfO₂ on InSb at a temperature of 200 °C was in an amorphous phase with low interfacial defect states. During post-deposition annealing (PDA) at 400 °C, In-Sb bonding was dissociated and diffusion through HfO₂ occurred. The diffusion of indium atoms from the InSb substrate into the HfO₂ increased during PDA at 400 °C. Most of the diffused atoms reacted with oxygen in the overall HfO₂ layer, which degraded the capacitance equivalent thickness (CET). However, since a 1-nm-thick Al₂O₃ passivation layer on the InSb substrate effectively

SUBMITTER: Baik M 

PROVIDER: S-EPMC5595993 | biostudies-literature | 2017 Sep

REPOSITORIES: biostudies-literature