Growth of Epitaxial ZnSn_xGe_1-xN₂ Alloys by MBE.

ABSTRACT: ZnSn_xGe_1-xN₂ alloys are chemically miscible semiconductor compounds with potential application as earth-abundant alternatives to In_xGa_1-xN. Preparation of ZnSn_xGe_1-xN₂ thin-films by reactive RF sputter deposition yield low-mobility, nanocrystalline films. In contrast, the growth of ZnSn_xGe_1-xN₂ films by molecular-beam epitaxy (MBE) on c-plane sapphire and GaN templates is described herein. Epitaxial films exhibited 3D growth on sapphire and 2D single-crystal quality on GaN, exhibiting substantial improvements in epitaxy and crystallinity relative to nanocrystalline sputtered films. Films on sapphire were n-type with electronic mobilities as high as 18 cm² V

SUBMITTER: Shing AM 

PROVIDER: S-EPMC5607306 | biostudies-literature | 2017 Sep

REPOSITORIES: biostudies-literature