Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons.

ABSTRACT: Bottom-up synthesized graphene nanoribbons and graphene nanoribbon heterostructures have promising electronic properties for high-performance field-effect transistors and ultra-low power devices such as tunneling field-effect transistors. However, the short length and wide band gap of these graphene nanoribbons have prevented the fabrication of devices with the desired performance and switching behavior. Here, by fabricating short channel (L _ch ~ 20 nm) devices with a thin, high-κ gate dielectric and a 9-atom wide (0.95 nm) armchair graphene nanoribbon as the channel material, we demonstrate field-effect transistors with high on-current (I _on > 1 μA at V _d = -1 V) and high I _on /I _off ~ 10⁵ at room temperature. We find that

SUBMITTER: Llinas JP 

PROVIDER: S-EPMC5608806 | biostudies-literature | 2017 Sep

REPOSITORIES: biostudies-literature