Physical origins of current and temperature controlled negative differential resistances in NbO₂.

ABSTRACT: Negative differential resistance behavior in oxide memristors, especially those using NbO₂, is gaining renewed interest because of its potential utility in neuromorphic computing. However, there has been a decade-long controversy over whether the negative differential resistance is caused by a relatively low-temperature non-linear transport mechanism or a high-temperature Mott transition. Resolving this issue will enable consistent and robust predictive modeling of this phenomenon for different applications. Here we examine NbO₂ memristors that exhibit both a current-controlled and a temperature-controlled negative differential resistance. Through thermal and chemical spectromicroscopy and numerical simulations, we confirm that the former is caused by a ~400 K non-lin

SUBMITTER: Kumar S 

PROVIDER: S-EPMC5610340 | biostudies-literature | 2017 Sep

REPOSITORIES: biostudies-literature