Valence Change Bipolar Resistive Switching Accompanied With Magnetization Switching in CoFe₂O₄ Thin Film.

ABSTRACT: Resistive Switching in oxides has offered new opportunities for developing resistive random access memory (ReRAM) devices. Here we demonstrated bipolar Resistive Switching along with magnetization switching of cobalt ferrite (CFO) thin film using Al/CFO/FTO sandwich structure, which makes it a potential candidate for developing future multifunctional memory devices. The device shows good retention characteristic time (>10⁴ seconds) and endurance performance, a good resistance ratio of high resistance state (HRS) and low resistance state (LRS) ~10³. Nearly constant resistance values in LRS and HRS confirm the stability and non-volatile nature of the device. The device shows different conduction mechanisms in the HRS and LRS i.e. Schottky, Poole Frenkel and Ohmic. Magne

SUBMITTER: Munjal S 

PROVIDER: S-EPMC5622061 | biostudies-literature | 2017 Sep

REPOSITORIES: biostudies-literature