Large-Area WS₂ Film with Big Single Domains Grown by Chemical Vapor Deposition.

ABSTRACT: High-quality WS₂ film with the single domain size up to 400 μm was grown on Si/SiO₂ wafer by atmospheric pressure chemical vapor deposition. The effects of some important fabrication parameters on the controlled growth of WS₂ film have been investigated in detail, including the choice of precursors, tube pressure, growing temperature, holding time, the amount of sulfur powder, and gas flow rate. By optimizing the growth conditions at one atmospheric pressure, we obtained tungsten disulfide single domains with an average size over 100 μm. Raman spectra, atomic force microscopy, and transmission electron microscopy provided direct evidence that the WS₂ film had an atomic layer thickness and a single-domain hexagonal structure with a high crystal qu

SUBMITTER: Liu P 

PROVIDER: S-EPMC5626679 | biostudies-literature | 2017 Oct

REPOSITORIES: biostudies-literature