Selective-area growth of single-crystal wurtzite GaN nanorods on SiO_x/Si(001) substrates by reactive magnetron sputter epitaxy exhibiting single-mode lasing.

ABSTRACT: Selective-area growth (SAG) of single-crystal wurtzite GaN nanorods (NRs) directly onto Si(001) substrates with un-etched native SiO_x amorphous layer, assisted by a patterning TiN_x mask fabricated by nanosphere lithography (NSL), has been realized by reactive magnetron sputter epitaxy (MSE). The GaN NRs were grown vertically to the substrate surface with the growth direction along c-axis in the well-defined nano-opening areas. A 5-step structural and morphological evolution of the SAG NRs observed at different sputtering times depicts a comprehensive growth model, listed in sequence as: formation of a polycrystalline wetting layer, predominating c-axis oriented nucleation, coarsening and coalescence of multi-islands, single NR evolution, and finally quasi-equilibrium

SUBMITTER: Serban EA 

PROVIDER: S-EPMC5629253 | biostudies-literature | 2017 Oct

REPOSITORIES: biostudies-literature