Intercalation of Si between MoS₂ layers.

ABSTRACT: We report a combined experimental and theoretical study of the growth of sub-monolayer amounts of silicon (Si) on molybdenum disulfide (MoS₂). At room temperature and low deposition rates we have found compelling evidence that the deposited Si atoms intercalate between the MoS₂ layers. Our evidence relies on several experimental observations: (1) Upon the deposition of Si on pristine MoS₂ the morphology of the surface transforms from a smooth surface to a hill-and-valley surface. The lattice constant of the hill-and-valley structure amounts to 3.16 Å, which is exactly the lattice constant of pristine MoS₂. (2) The transitions from hills to valleys are not abrupt, as one would expect for epitaxial islands growing on-top of a substrate, but very gr

SUBMITTER: van Bremen R 

PROVIDER: S-EPMC5629401 | biostudies-literature | 2017

REPOSITORIES: biostudies-literature