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Enhanced mobility CsPbI3 quantum dot arrays for record-efficiency, high-voltage photovoltaic cells.


ABSTRACT: We developed lead halide perovskite quantum dot (QD) films with tuned surface chemistry based on A-site cation halide salt (AX) treatments. QD perovskites offer colloidal synthesis and processing using industrially friendly solvents, which decouples grain growth from film deposition, and at present produce larger open-circuit voltages (VOC's) than thin-film perovskites. CsPbI3 QDs, with a tunable bandgap between 1.75 and 2.13 eV, are an ideal top cell candidate for all-perovskite multijunction solar cells because of their demonstrated small VOC deficit. We show that charge carrier mobility within perovskite QD films is dictated by the chemical conditions at the QD-QD junctions. The AX treatments provide a method for tuning the coupling between perovskite QDs, which is exploited for improved charge transport for fabricating high-quality QD films and devices. The AX treatments presented here double the film mobility, enabling increased photocurrent, and lead to a record certified QD solar cell efficiency of 13.43%.

SUBMITTER: Sanehira EM 

PROVIDER: S-EPMC5659658 | biostudies-literature | 2017 Oct

REPOSITORIES: biostudies-literature

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Enhanced mobility CsPbI<sub>3</sub> quantum dot arrays for record-efficiency, high-voltage photovoltaic cells.

Sanehira Erin M EM   Marshall Ashley R AR   Christians Jeffrey A JA   Harvey Steven P SP   Ciesielski Peter N PN   Wheeler Lance M LM   Schulz Philip P   Lin Lih Y LY   Beard Matthew C MC   Luther Joseph M JM  

Science advances 20171027 10


We developed lead halide perovskite quantum dot (QD) films with tuned surface chemistry based on A-site cation halide salt (AX) treatments. QD perovskites offer colloidal synthesis and processing using industrially friendly solvents, which decouples grain growth from film deposition, and at present produce larger open-circuit voltages (<i>V</i><sub>OC</sub>'s) than thin-film perovskites. CsPbI<sub>3</sub> QDs, with a tunable bandgap between 1.75 and 2.13 eV, are an ideal top cell candidate for a  ...[more]

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