A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels.

ABSTRACT: We propose a hybrid gate structure for ion gel dielectrics using an ultra-thin Al₂O₃ passivation layer for realizing high-performance devices based on electric-double-layer capacitors. Electric-double-layer transistors can be applied to practical devices with flexibility and transparency as well as research on the fundamental physical properties of channel materials; however, they suffer from inherent unwanted leakage currents between electrodes, especially for channel materials with low off-currents. Therefore, the Al₂O₃ passivation layer was introduced between the metal electrodes and ion gel film as a leakage current barrier; this simple approach effectively reduced the leakage current without capacitance degradation. In addition, we confirmed

SUBMITTER: Jo H 

PROVIDER: S-EPMC5660217 | biostudies-literature | 2017 Oct

REPOSITORIES: biostudies-literature