Hf/Sb co-doping induced a high thermoelectric performance of ZrNiSn: First-principles calculation.
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ABSTRACT: Previous experiments showed that Hf/Sb co-doping in ZrNiSn impressively improved the electrical conductivity (σ). To explore the physical reasons for this improvement, the electronic structures of HfxZr1-xNiSn1-ySby (x = 0, 0.25, 0.5; y = 0, 0.02) have been systematically investigated by using the first-principles method and semiclassical Boltzmann transport theory. 50% Hf doping at Zr site in ZrNiSn simultaneously increases the degeneracy and dispersion of energy bands near the conduction band edge, which are helpful to optimizing Seebeck coefficient and slightly improving σ. Furthermore, 2% Sb co-doping at Sn site in Hf0.5Zr0.5NiSn not only increases total density of states near the Fermi energy but also retains high mobil
SUBMITTER: Zhang J
PROVIDER: S-EPMC5674061 | biostudies-literature | 2017 Nov
REPOSITORIES: biostudies-literature
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