A spot laser modulated resistance switching effect observed on n-type Mn-doped ZnO/SiO₂/Si structure.

ABSTRACT: In this work, a spot laser modulated resistance switching (RS) effect is firstly observed on n-type Mn-doped ZnO/SiO₂/Si structure by growing n-type Mn-doped ZnO film on Si wafer covered with a 1.2 nm native SiO₂, which has a resistivity in the range of 50-80 Ω∙cm. The I-V curve obtained in dark condition evidences the structure a rectifying junction, which is further confirmed by placing external bias. Compared to the resistance state modulated by electric field only in dark (without illumination), the switching voltage driving the resistance state of the structure from one state to the other, shows clear shift under a spot laser illumination. Remarkably, the switching voltage shift shows a dual dependence on the illumination position and power of the spot laser. We

SUBMITTER: Lu J 

PROVIDER: S-EPMC5680311 | biostudies-literature | 2017 Nov

REPOSITORIES: biostudies-literature