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Realization of Quasi-Omnidirectional Solar Cells with Superior Electrical Performance by All-Solution-Processed Si Nanopyramids.

ABSTRACT: Large-scale (156 mm × 156 mm) quasi-omnidirectional solar cells are successfully realized and featured by keeping high cell performance over broad incident angles (?), via employing Si nanopyramids (SiNPs) as surface texture. SiNPs are produced by the proposed metal-assisted alkaline etching method, which is an all-solution-processed method and highly simple together with cost-effective. Interestingly, compared to the conventional Si micropyramids (SiMPs)-textured solar cells, the SiNPs-textured solar cells possess lower carrier recombination and thus superior electrical performances, showing notable distinctions from other Si nanostructures-textured solar cells. Furthermore, SiNPs-textured solar cells have very little drop of quantum efficiency with increasing ?, demonstrating the quasi-omnidirectional characteristic. As an overall result, both the SiNPs-textured homojunction and heterojunction solar cells possess higher daily electric energy production with a maximum relative enhancement approaching 2.5%, when compared to their SiMPs-textured counterparts. The quasi-omnidirectional solar cell opens a new opportunity for photovoltaics to produce more electric energy with a low cost.

SUBMITTER: Zhong S

PROVIDER: S-EPMC5700634 | biostudies-literature | 2017 Nov

REPOSITORIES: biostudies-literature

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Realization of Quasi-Omnidirectional Solar Cells with Superior Electrical Performance by All-Solution-Processed Si Nanopyramids.

Zhong Sihua S Wang Wenjie W Tan Miao M Zhuang Yufeng Y Shen Wenzhong W

Advanced science (Weinheim, Baden-Wurttemberg, Germany) 20170706 11

Large-scale (156 mm × 156 mm) quasi-omnidirectional solar cells are successfully realized and featured by keeping high cell performance over broad incident angles (θ), via employing Si nanopyramids (SiNPs) as surface texture. SiNPs are produced by the proposed metal-assisted alkaline etching method, which is an all-solution-processed method and highly simple together with cost-effective. Interestingly, compared to the conventional Si micropyramids (SiMPs)-textured solar cells, the SiNPs-textured ...[more]

PMID: 29201616

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Project description:Silicon heterojunction (SHJ) solar cells, as one of the most promising passivated contact solar cell technologies of the next generation, have the advantages of high conversion efficiency, high open-circuit voltage, low-temperature coefficient, and no potential-induced degradation. For the single-side rear-emitter SHJ solar cells, the n-type carrier selective layer, which serves as the light-incident side, plays a pivotal role in determining the performance of heterojunction devices. Consequently, a superior n-doped layer should exhibit high optical transmittance and minimal optical absorption, along with a substantial effective doping level to guarantee the formation of dark conductivity (σd) and electron-transport capacity. In this work, we investigated the optical and electrical properties of different n-type monolayers and stacked gradient multilayers, including monolayer, bilayer, and trilayer Si-based thin films, acting as electron-transport layers (ETL) prepared by plasma-enhanced chemical vapor deposition, and studied the influences of these above layers on the performance of SHJ solar cells. The experimental results demonstrate that the ETL with an n-nc-Si:H/n-nc-SiOx:H/n+-nc-Si:H trilayer structure exhibits the potential to boost highly efficient solar cells. The bottom highly crystallized, lightly phosphorus-doped n-nc-Si:H film promotes rapid nucleation of the intermediate n-nc-SiOx:H film and thus reduces the thickness of the incubation layer, as well as improves the passivation contact. The n-nc-SiOx:H film in the middle layer provides excellent optical properties and reduces parasitic absorption, thereby increasing the short-circuit current density. Furthermore, the highly doped n+-nc-Si:H at the top offers an optimal ohmic contact with the reactive plasma deposition-grown TCO layer, which ultimately enhances the fill factor. Ultimately, a conversion efficiency of 20.41%, with an open-circuit voltage of 720 mV, a short-circuit current density of 39.34 mA/cm2, and a filling factor of 72.05%, was achieved in the SHJ solar cell using a typical trilayer structure. This kind of trilayer structure has a particular significance for potential industrialized applications as it allows for efficient utilization of solar energy.

Dataset Information

Realization of Quasi-Omnidirectional Solar Cells with Superior Electrical Performance by All-Solution-Processed Si Nanopyramids.

Publications

Realization of Quasi-Omnidirectional Solar Cells with Superior Electrical Performance by All-Solution-Processed Si Nanopyramids.

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