Temperature-Dependent Photoluminescence Emission from Unstrained and Strained GaSe Nanosheets.

ABSTRACT: Two-dimensional AIIIBVI layered semiconductors have recently attracted great attention due to their potential applications in piezo-phototronics and optoelectronics. Here, we report the temperature-dependent photoluminescence (PL) of strained and unstrained GaSe flakes. It is found that, as the temperature increases, the PL from both the strained (wrinkled) and unstrained (flat) positions show a prominent red-shift to low energies. However, for the flat case, the slope of PL energy versus temperature at the range of 163-283 K is about -0.36 meV/K, which is smaller than that of the wrinkled one (-0.5 meV/K). This is because more strain can be introduced at the freestanding wrinkled position during the temperature increase, thus accelerates the main PL peak (peak I, direct band gap transitio

SUBMITTER: Zhang D 

PROVIDER: S-EPMC5706229 | biostudies-literature | 2017 Nov

REPOSITORIES: biostudies-literature