Memory effect behavior with respect to the crystal grain size in the organic-inorganic hybrid perovskite nonvolatile resistive random access memory.

ABSTRACT: The crystal grain size of CH₃NH₃PbI₃ (MAPbI₃) organic-inorganic hybrid perovskite (OHP) film was controllable in the range from ~60 nm to ~600 nm by non-solvents inter-diffusion controlled crystallization process in dripping crystallization method for the formation of perovskite film. The MAPbI₃ OHP non-volatile resistive random access memory with ~60 nm crystal grain size exhibited >0.1 TB/in² storage capacity, >600 cycles endurance, >10⁴ s data retention time, ~0.7 V set, and ~-0.61 V re-set bias voltage.

SUBMITTER: Heo JH 

PROVIDER: S-EPMC5707385 | biostudies-literature | 2017 Nov

REPOSITORIES: biostudies-literature