Van der Waals epitaxial growth and optoelectronics of large-scale WSe₂/SnS₂ vertical bilayer p-n junctions.

ABSTRACT: High-quality two-dimensional atomic layered p-n heterostructures are essential for high-performance integrated optoelectronics. The studies to date have been largely limited to exfoliated and restacked flakes, and the controlled growth of such heterostructures remains a significant challenge. Here we report the direct van der Waals epitaxial growth of large-scale WSe₂/SnS₂ vertical bilayer p-n junctions on SiO₂/Si substrates, with the lateral sizes reaching up to millimeter scale. Multi-electrode field-effect transistors have been integrated on a single heterostructure bilayer. Electrical transport measurements indicate that the field-effect transistors of the junction show an ultra-low off-state leakage current of 10^-14 A and a highest on-off ra

SUBMITTER: Yang T 

PROVIDER: S-EPMC5715014 | biostudies-literature | 2017 Dec

REPOSITORIES: biostudies-literature