Sub-10 Nanometer Feature Size in Silicon Using Thermal Scanning Probe Lithography.

ABSTRACT: High-resolution lithography often involves thin resist layers which pose a challenge for pattern characterization. Direct evidence that the pattern was well-defined and can be used for device fabrication is provided if a successful pattern transfer is demonstrated. In the case of thermal scanning probe lithography (t-SPL), highest resolutions are achieved for shallow patterns. In this work, we study the transfer reliability and the achievable resolution as a function of applied temperature and force. Pattern transfer was reliable if a pattern depth of more than 3 nm was reached and the walls between the patterned lines were slightly elevated. Using this geometry as a benchmark, we studied the formation of 10-20 nm half-pitch dense lines as a function of the applied force and temperature. W

SUBMITTER: Ryu Cho YK 

PROVIDER: S-EPMC5746844 | biostudies-literature | 2017 Dec

REPOSITORIES: biostudies-literature