Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes.

ABSTRACT: In this work, we demonstrate high-performance electrically injected GaN/InGaN core-shell nanowire-based LEDs grown using selective-area epitaxy and characterize their electro-optical properties. To assess the quality of the quantum wells, we measure the internal quantum efficiency (IQE) using conventional low temperature/room temperature integrated photoluminescence. The quantum wells show a peak IQE of 62%, which is among the highest reported values for nanostructure-based LEDs. Time-resolved photoluminescence (TRPL) is also used to study the carrier dynamics and response times of the LEDs. TRPL measurements yield carrier lifetimes in the range of 1-2 ns at high excitation powers. To examine the electrical performance of the LEDs, current density-voltage (J-V) and light-current density-vo

SUBMITTER: Nami M 

PROVIDER: S-EPMC5764991 | biostudies-literature | 2018 Jan

REPOSITORIES: biostudies-literature