Reconfiguring crystal and electronic structures of MoS₂ by substitutional doping.

ABSTRACT: Doping of traditional semiconductors has enabled technological applications in modern electronics by tailoring their chemical, optical and electronic properties. However, substitutional doping in two-dimensional semiconductors is at a comparatively early stage, and the resultant effects are less explored. In this work, we report unusual effects of degenerate doping with Nb on structural, electronic and optical characteristics of MoS₂ crystals. The doping readily induces a structural transformation from naturally occurring 2H stacking to 3R stacking. Electronically, a strong interaction of the Nb impurity states with the host valence bands drastically and nonlinearly modifies the electronic band structure with the valence band maximum of multilayer MoS₂ at the Γ point

SUBMITTER: Suh J 

PROVIDER: S-EPMC5768716 | biostudies-literature | 2018 Jan

REPOSITORIES: biostudies-literature