Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS₂ Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts.

ABSTRACT: The design, fabrication, and characterization of ultra-high responsivity photodetectors based on mesoscopic multilayer MoS₂ is presented, which is a less explored system compared to direct band gap monolayer MoS₂ that has received increasing attention in recent years. The device architecture is comprised of a metal-semiconductor-metal (MSM) photodetector, where Mo was used as the contact metal to suspended MoS₂ membranes. The photoresponsivity [Formula: see text] was measured to be ~1.4 × 10⁴ A/W, which is > 10⁴ times higher compared to prior reports, while the detectivity D* was computed to be ~2.3 × 10¹¹ Jones at 300 K at an optical power P of ~14.5 pW and wavelength λ of ~700 nm. In addition, the dominant photocurrent mec

SUBMITTER: Saenz GA 

PROVIDER: S-EPMC5775306 | biostudies-literature | 2018 Jan

REPOSITORIES: biostudies-literature