Combined scanning probe electronic and thermal characterization of an indium arsenide nanowire.

ABSTRACT: As electronic devices are downsized, physical processes at the interface to electrodes may dominate and limit device performance. A crucial step towards device optimization is being able to separate such contact effects from intrinsic device properties. Likewise, an increased local temperature due to Joule heating at contacts and the formation of hot spots may put limits on device integration. Therefore, being able to observe profiles of both electronic and thermal device properties at the nanoscale is important. Here, we show measurements by scanning thermal and Kelvin probe force microscopy of the same 60 nm diameter indium arsenide nanowire in operation. The observed temperature along the wire is substantially elevated near the contacts and deviates from the bell-shaped temperature prof

SUBMITTER: Wagner T 

PROVIDER: S-EPMC5789438 | biostudies-literature | 2018

REPOSITORIES: biostudies-literature