Gate Tunable Transport in Graphene/MoS₂/(Cr/Au) Vertical Field-Effect Transistors.

ABSTRACT: Two-dimensional materials based vertical field-effect transistors have been widely studied due to their useful applications in industry. In the present study, we fabricate graphene/MoS₂/(Cr/Au) vertical transistor based on the mechanical exfoliation and dry transfer method. Since the bottom electrode was made of monolayer graphene (Gr), the electrical transport in our Gr/MoS₂/(Cr/Au) vertical transistors can be significantly modified by using back-gate voltage. Schottky barrier height at the interface between Gr and MoS₂ can be modified by back-gate voltage and the current bias. Vertical resistance (Rvert) of a Gr/MoS₂/(Cr/Au) transistor is compared with planar resistance (Rplanar) of a conventional lateral MoS₂ field-effect transistor. We have also studied electrical properties for variou

SUBMITTER: Nazir G 

PROVIDER: S-EPMC5791101 | biostudies-literature | 2017 Dec

REPOSITORIES: biostudies-literature