Ultrahigh, Ultrafast, and Self-Powered Visible-Near-Infrared Optical Position-Sensitive Detector Based on a CVD-Prepared Vertically Standing Few-Layer MoS2/Si Heterojunction.

ABSTRACT: MoS2, as a typical transition metal dichalcogenide, has attracted great interest because of its distinctive electronic, optical, and catalytic properties. However, its advantages of strong light absorption and fast intralayer mobility cannot be well developed in the usual reported monolayer/few-layer structures, which make the performances of MoS2-based devices undesirable. Here, large-area, high-quality, and vertically oriented few-layer MoS2 (V-MoS2) nanosheets are prepared by chemical vapor deposition and successfully transferred onto an Si substrate to form the V-MoS2/Si heterojunction. Because of the strong light absorption and the fast carrier transport speed of the V-MoS2 nanosheets, as well as the strong built-in electric field at the interface of V-MoS2 and Si, lateral photovoltai

SUBMITTER: Cong R 

PROVIDER: S-EPMC5827457 | biostudies-literature | 2018 Feb

REPOSITORIES: biostudies-literature