Impact of growth rate on graphene lattice-defect formation within a single crystalline domain.

ABSTRACT: Chemical vapor deposition (CVD) is promising for the large scale production of graphene and other two-dimensional materials. Optimization of the CVD process for enhancing their quality is a focus of ongoing effort and significant progress has been made in decreasing the defectiveness associated with grain boundaries and nucleation spots. However, little is known about the quality and origin of structural defects in the outgrowing lattice which are present even in single-crystalline material and represent the limit of current optimization efforts. We here investigate the formation kinetics of such defects by controlling graphene's growth rate over a wide range using nanoscale confinements. Statistical analysis of Raman spectroscopic results shows a clear trend between growth rate and defect

SUBMITTER: Chin HT 

PROVIDER: S-EPMC5840368 | biostudies-literature | 2018 Mar

REPOSITORIES: biostudies-literature