Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS₂ by Pulsed Metalorganic Chemical Vapor Deposition.

ABSTRACT: High volume manufacturing of devices based on transition metal dichalcogenide (TMD) ultra-thin films will require deposition techniques that are capable of reproducible wafer-scale growth with monolayer control. To date, TMD growth efforts have largely relied upon sublimation and transport of solid precursors with minimal control over vapor phase flux and gas-phase chemistry, which are critical for scaling up laboratory processes to manufacturing settings. To address these issues, we report a new pulsed metalorganic chemical vapor deposition (MOCVD) route for MoS₂ film growth in a research-grade single-wafer reactor. Using bis(tert-butylimido)-bis(dimethylamido)molybdenum and diethyl disulfide we deposit MoS₂ films from ≈ 1 nm to ≈ 25 nm in thickness on SiO₂

SUBMITTER: Kalanyan B 

PROVIDER: S-EPMC5846631 | biostudies-literature | 2017 Aug

REPOSITORIES: biostudies-literature