Material Synthesis and Device Aspects of Monolayer Tungsten Diselenide.

ABSTRACT: In this paper, we investigate the synthesis of WSe₂ by chemical vapor deposition and study the current transport and device scaling of monolayer WSe₂. We found that the device characteristics of the back-gated WSe₂ transistors with thick oxides are very sensitive to the applied drain bias, especially for transistors in the sub-micrometer regime. The threshold voltage, subthreshold swing, and extracted field-effect mobility vary with the applied drain bias. The output characteristics in the long-channel transistors show ohmic-like behavior, while that in the short-channel transistors show Schottky-like behavior. Our investigation reveals that these phenomena are caused by the drain-induced barrier lowering (short-channel effect). For back-gated WSe₂

SUBMITTER: Yao Z 

PROVIDER: S-EPMC5869716 | biostudies-literature | 2018 Mar

REPOSITORIES: biostudies-literature