Scalability assessment of Group-IV mono-chalcogenide based tunnel FET.

ABSTRACT: Selection of appropriate channel material is the key to design high performance tunnel field effect transistor (TFET), which promises to outperform the conventional metal oxide semiconductor field effect transistor (MOSFET) in ultra-low energy switching applications. Recently discovered atomically thin GeSe, a group IV mono-chalcogenide, can be a potential candidate owing to its direct electronic band gap and low carrier effective mass. In this work we employ ballistic quantum transport model to assess the intrinsic performance limit of monolayer GeSe-TFET. We first study the electronic band structure by regular and hybrid density functional theory and develop two band k · p hamiltonian for the material. We find that the complex band wraps itself within the conduction band and valence band

SUBMITTER: Brahma M 

PROVIDER: S-EPMC5902579 | biostudies-literature | 2018 Apr

REPOSITORIES: biostudies-literature