Nanomanufacturing of silicon surface with a single atomic layer precision via mechanochemical reactions.

ABSTRACT: Topographic nanomanufacturing with a depth precision down to atomic dimension is of importance for advancement of nanoelectronics with new functionalities. Here we demonstrate a mask-less and chemical-free nanolithography process for regio-specific removal of atomic layers on a single crystalline silicon surface via shear-induced mechanochemical reactions. Since chemical reactions involve only the topmost atomic layer exposed at the interface, the removal of a single atomic layer is possible and the crystalline lattice beneath the processed area remains intact without subsurface structural damages. Molecular dynamics simulations depict the atom-by-atom removal process, where the first atomic layer is removed preferentially through the formation and dissociation of interfacial bridge bonds.

SUBMITTER: Chen L 

PROVIDER: S-EPMC5906689 | biostudies-literature | 2018 Apr

REPOSITORIES: biostudies-literature