High Performance Amplifier Element Realization via MoS2/GaTe Heterostructures.

ABSTRACT: 2D layered materials (2DLMs), together with their heterostructures, have been attracting tremendous research interest in recent years because of their unique physical and electrical properties. A variety of circuit elements have been made using mechanically exfoliated 2DLMs recently, including hard drives, detectors, sensors, and complementary metal oxide semiconductor field-effect transistors. However, 2DLM-based amplifier circuit elements are rarely studied. Here, the integration of 2DLMs with 3D bulk materials to fabricate vertical junction transistors with current amplification based on a MoS2/GaTe heterostructure is reported. Vertical junction transistors exhibit the typical current amplification characteristics of conventional bulk bipolar junction transistors while having good curre

SUBMITTER: Yan X 

PROVIDER: S-EPMC5908369 | biostudies-literature | 2018 Apr

REPOSITORIES: biostudies-literature