Structural defects in a nanomesh of bulk MoS₂ using an anodic aluminum oxide template for photoluminescence efficiency enhancement.

ABSTRACT: Two-dimensional (2D) materials beyond graphene have attracted considerable interest because of the zero bandgap drawbacks of graphene. Transition metal dichalcogenides (TMDs), such as MoS₂ and WSe₂, are the potential candidates for next 2D materials because atomically thin layers of TMDs exhibit unique and versatile electrical and optical properties. Although bulk TMDs materials have an indirect bandgap, an indirect-to-direct bandgap transition is observed in monolayers of TMDs (MoS₂, WSe₂, and MoSe₂). Optical properties of TMD films can be improved by the introduction of structural defects. For example, large-area spatial tuning of the optical transition of bulk MoS₂ films is achieved by using an anodic aluminum oxide (AAO)

SUBMITTER: Kim T 

PROVIDER: S-EPMC5923261 | biostudies-literature | 2018 Apr

REPOSITORIES: biostudies-literature