A silicon metal-oxide-semiconductor electron spin-orbit qubit.

ABSTRACT: The silicon metal-oxide-semiconductor (MOS) material system is a technologically important implementation of spin-based quantum information processing. However, the MOS interface is imperfect leading to concerns about 1/f trap noise and variability in the electron g-factor due to spin-orbit (SO) effects. Here we advantageously use interface-SO coupling for a critical control axis in a double-quantum-dot singlet-triplet qubit. The magnetic field-orientation dependence of the g-factors is consistent with Rashba and Dresselhaus interface-SO contributions. The resulting all-electrical, two-axis control is also used to probe the MOS interface noise. The measured inhomogeneous dephasing time, [Formula: see text], of 1.6 μs is consistent with 99.95% ²⁸Si enrichment. Furthermore, when t

SUBMITTER: Jock RM 

PROVIDER: S-EPMC5931988 | biostudies-literature | 2018 May

REPOSITORIES: biostudies-literature