Electronic states of deep trap levels in a-plane GaN templates grown on r-plane sapphire by HVPE.

ABSTRACT: We report on the defect states incorporated in a-plane GaN crystals grown on r-plane sapphire substrates by hydride vapor phase epitaxy (HVPE), using deep level transient spectroscopy (DLTS). Two defect states were observed at 0.2 eV and 0.55 eV below the conduction band minimum with defect densities of 5 × 10¹²/cm³ and 4.7 × 10¹³/cm³, respectively. The size of capture cross section, non-linear relation of trap densities from the depth profile, filling pulse width, and PL measurements indicated that the electronic deep trap levels in a-plane GaN on r-plane sapphire by HVPE originated from non-interacting point defects such as N_Ga, complex defects involving Si, O, or C, and V_Ga-related centres. Even though the a-plane GaN tem

SUBMITTER: Lee M 

PROVIDER: S-EPMC5959929 | biostudies-literature | 2018 May

REPOSITORIES: biostudies-literature