Electric-field-controlled interface dipole modulation for Si-based memory devices.

ABSTRACT: Various nonvolatile memory devices have been investigated to replace Si-based flash memories or emulate synaptic plasticity for next-generation neuromorphic computing. A crucial criterion to achieve low-cost high-density memory chips is material compatibility with conventional Si technologies. In this paper, we propose and demonstrate a new memory concept, interface dipole modulation (IDM) memory. IDM can be integrated as a Si field-effect transistor (FET) based memory device. The first demonstration of this concept employed a HfO₂/Si MOS capacitor where the interface monolayer (ML) TiO₂ functions as a dipole modulator. However, this configuration is unsuitable for Si-FET-based devices due to its large interface state density (D _it ). Consequently, we propo

SUBMITTER: Miyata N 

PROVIDER: S-EPMC5981312 | biostudies-literature | 2018 May

REPOSITORIES: biostudies-literature