Thermal hysteresis measurement of the VO₂ emissivity and its application in thermal rectification.

ABSTRACT: Hysteresis loops in the emissivity of VO₂ thin films grown on sapphire and silicon substrates by a pulsed laser deposition process are experimentally measured through the thermal-wave resonant cavity technique. Remarkable variations of about 43% are observed in the emissivity of both VO₂ films, within their insulator-to-metal and metal-to-insulator transitions. It is shown that: i) The principal hysteresis width (maximum slope) in the VO₂ emissivity of the VO₂ + silicon sample is around 3 times higher (lower) than the corresponding one of the VO₂ + sapphire sample. VO₂ synthesized on silicon thus exhibits a wider principal hysteresis loop with slower MIT than VO₂ on sapphire, as a result of the significant differe

SUBMITTER: Gomez-Heredia CL 

PROVIDER: S-EPMC5981426 | biostudies-literature | 2018 May

REPOSITORIES: biostudies-literature