Surface Chemistry of Thermal Dry Etching of Cobalt Thin Films Using Hexafluoroacetylacetone (hfacH).

ABSTRACT: Amechanism of thermal dry etching process of cobalt thin films by using 1,1,1,5,5,5-hexafluoro-2,4-pentanedione (hexafluoroacetylacetone, hfacH) was investigated. This process, relevant to atomic layer etching (ALE) technology directed towards oxidized cobalt films, requires adsorption of molecular organic precursor, such as hfacH, at moderate temperatures and is often thought of as releasing water and Co(hfac)₂ at elevated temperatures. The reaction was analyzed in situ by temperature-programmed desorption (TPD) and the resulting surface was investigated ex situ by X-ray photoelectron spectroscopy (XPS). The changes in surface morphology during the process were monitored by atomic force microscopy (AFM) and scanning electron microscopy (SEM). The removal of Co(hfac)₂

SUBMITTER: Zhao J 

PROVIDER: S-EPMC6013264 | biostudies-literature | 2018 Oct

REPOSITORIES: biostudies-literature