K-space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures.

ABSTRACT: Nanostructures based on buried interfaces and heterostructures are at the heart of modern semiconductor electronics as well as future devices utilizing spintronics, multiferroics, topological effects, and other novel operational principles. Knowledge of electronic structure of these systems resolved in electron momentum k delivers unprecedented insights into their physics. Here we explore 2D electron gas formed in GaN/AlGaN high-electron-mobility transistor heterostructures with an ultrathin barrier layer, key elements in current high-frequency and high-power electronics. Its electronic structure is accessed with angle-resolved photoelectron spectroscopy whose probing depth is pushed to a few nanometers using soft-X-ray synchrotron radiation. The experiment yields direct k-space images of

SUBMITTER: Lev LL 

PROVIDER: S-EPMC6041315 | biostudies-literature | 2018 Jul

REPOSITORIES: biostudies-literature