Signatures of transient Wannier-Stark localization in bulk gallium arsenide.

ABSTRACT: Many properties of solids result from the fact that in a periodic crystal structure, electronic wave functions are delocalized over many lattice sites. Electrons should become increasingly localized when a strong electric field is applied. So far, this Wannier-Stark regime has been reached only in artificial superlattices. Here we show that extremely transient bias over the few-femtosecond period of phase-stable mid-infrared pulses may localize electrons even in a bulk semiconductor like GaAs. The complicated band structure of a three-dimensional crystal leads to a strong blurring of field-dependent steps in the Wannier-Stark ladder. Only the central step emerges strongly in interband electro-absorption because its energetic position is dictated by the electronic structure at an atomic lev

SUBMITTER: Schmidt C 

PROVIDER: S-EPMC6056559 | biostudies-literature | 2018 Jul

REPOSITORIES: biostudies-literature