Electronic contribution in heat transfer at metal-semiconductor and metal silicide-semiconductor interfaces.

ABSTRACT: This work presents a direct measurement of the Kapitza thermal boundary resistance R_th, between platinum-silicon and platinum silicide-silicon interfaces. Experimental measurements were made using a frequency domain photothermal radiometry set up at room temperature. The studied samples consist of ≈50 nm of platinum and ≈110 nm of platinum silicide on silicon substrates with different doping levels. The substrate thermal diffusivity was found via a hybrid frequency/spatial domain thermoreflectance set up. The films and the interfaces between the two layers were characterized using scanning electron microscopy, transmission electron microscopy and energy-dispersive X-ray spectroscopy. X-ray diffraction was also used to determine the atomic and molecular structures of the samples.

SUBMITTER: Hamaoui G 

PROVIDER: S-EPMC6063978 | biostudies-literature | 2018 Jul

REPOSITORIES: biostudies-literature