Coplanar-gate ZnO nanowire field emitter arrays with enhanced gate-control performance using a ring-shaped cathode.

ABSTRACT: Nanowire field emitters have great potential for use as large-area gated field emitter arrays (FEAs). However, the micrometer-scale cathode patterns in gated FEA devices will reduce regulation of the gate voltage and limit the field emission currents of these devices as a result of field-screening effect among the neighboring nanowires. In this article, a ring-shaped ZnO nanowire pad is proposed to overcome this problem. Diode measurements show that the prepared ring-shaped ZnO nanowire pad arrays shows uniform emission with a turn-on field of 5.9 V/µm and a field emission current density of 4.6 mA/cm² under an applied field of 9 V/µm. The ZnO nanowire pad arrays were integrated into coplanar-gate FEAs and enhanced gate-controlled device characteristics were obtained. The gate-c

SUBMITTER: Zhao L 

PROVIDER: S-EPMC6095927 | biostudies-literature | 2018 Aug

REPOSITORIES: biostudies-literature